Wafer holder for supporting semiconductor wafer

专利摘要:
PURPOSE: A substrate holder for supporting a semiconductor substrate is provided to be capable of preventing the semiconductor substrate from being thermally attached to the substrate holder for restraining the generation of damage or failure on the semiconductor substrate. CONSTITUTION: A substrate holder for supporting a semiconductor substrate(100) is provided with a disc type holder body part(10) for loading the semiconductor substrate and a plurality of substrate support parts(20) prolonged from the upper surface of the holder body part for supporting the semiconductor substrate. Preferably, the holder body part is made of quartz or silicon carbide. Preferably, the substrate support parts are shaped into concentric circles.
公开号:KR20040033403A
申请号:KR1020020062476
申请日:2002-10-14
公开日:2004-04-28
发明作者:박승갑
申请人:주식회사 테라세미콘；
IPC主号:

专利说明:

Board holder for supporting semiconductor substrates {Wafer holder for supporting semiconductor wafer}
[7] BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate holder for supporting a semiconductor substrate, and more particularly to a substrate holder for supporting a semiconductor substrate used in a semiconductor device for a high temperature heat treatment step.
[8] In the semiconductor manufacturing apparatus for manufacturing a semiconductor device, a substrate support or a support plate for loading and placing a semiconductor substrate is essential. In particular, the sheet type dry etch manufacturing apparatus or chemical vapor deposition (CVD) manufacturing apparatus has a separate substrate supporting plate to support the semiconductor substrate as a whole. By the way, in the batch type manufacturing apparatus which can process a large quantity of semiconductor substrates at once, it is designed so that a semiconductor substrate may be partially supported by the edge part. In particular, in the furnace used in the high temperature heat treatment process, slots are formed to horizontally load the semiconductor substrate into a vertical tubular reaction tube so as to load a plurality of semiconductor substrates. . This slot serves as a means for supporting the semiconductor substrate.
[9] However, since these slots locally support the semiconductor substrate only at the edge portion, most of the support points are concentrated at the edge portion. Basically, the center of the semiconductor substrate is easily caused to warp by gravity. When the semiconductor substrate is processed in a high-temperature atmosphere, the semiconductor substrate expands to increase its area, and thus warpage of the semiconductor substrate becomes more severe.
[10] In addition, as the diameter of the semiconductor substrate is larger than 12 inches (300 mm), the flow of the supply gas is uneven, so that it is difficult to uniformly heat the semiconductor substrate as a whole, and thus, it is more difficult to maintain the process uniformity.
[11] Further, even if a separate supporting plate for supporting the semiconductor substrate is provided below, a film such as a silicon oxide film or a silicon nitride film formed in a previous process may remain on the lower surface of the semiconductor substrate. Such an insulating film has a high probability that the lower surface of the semiconductor substrate sticks to the support plate during the high temperature process. Therefore, it is very difficult to use the support plate which supports a semiconductor substrate in a thermal process semiconductor device.
[12] Accordingly, a technical problem to be achieved by the present invention is to support a semiconductor substrate, which can safely support the semiconductor substrate, prevent the semiconductor substrate from thermally adhering to the substrate holder during the process, and suppress the occurrence of breakage or defect during the process. It is to provide a substrate holder for.
[1] 1A to 1B are a plan view and a sectional view showing a first embodiment of a substrate holder for supporting a semiconductor substrate according to the present invention.
[2] 2A and 2B are a plan view and a cross-sectional view showing a second embodiment of a substrate holder for supporting a semiconductor substrate according to the present invention.
[3] 3 is a plan view showing a modification of the second embodiment of the substrate holder for supporting a semiconductor substrate according to the present invention.
[4] 4A to 4B are a plan view and a sectional view showing a fourth embodiment of a substrate holder for supporting a semiconductor substrate according to the present invention.
[5] 5A to 5B are a plan view and a sectional view showing a fifth embodiment of a substrate holder for supporting a semiconductor substrate according to the present invention.
[6] 6A to 6B are a plan view and a sectional view showing a modification of the fifth embodiment of the substrate holder for supporting a semiconductor substrate according to the present invention.
[13] In order to achieve the above technical problem, the substrate holder for supporting a semiconductor substrate of the present invention, the holder body formed in the shape of a circular plate so that the semiconductor substrate can be placed, and protrudes while forming a predetermined figure on the upper surface of the holder body is partially at the bottom It includes a substrate support for supporting a semiconductor substrate.
[14] Here, the holder body is formed of any one of quartz and silicon carbide can be applied in a high temperature process.
[15] The substrate support portion is formed in a plurality of concentric circles on the plate surface of the holder body, and can support the semiconductor substrate in a balanced manner while reducing the contact area with the semiconductor substrate. The temperature uniformity and the process uniformity can be improved by passing through the lower portion of the semiconductor substrate.
[16] In another embodiment, the substrate support part is formed of a plurality of dots protruding from the plate surface while forming a predetermined figure on the plate surface of the holder body. It is preferable that the supporting point of the substrate support is a tapered type of spinner having a wide bottom and a sharp top, which can minimize the contact area with the semiconductor substrate.
[17] Support points are arranged at each vertex according to the shape of either a triangle or a honey comb. This arrangement not only balances the support of the semiconductor substrate but also induces a uniform flow of process gas when the semiconductor substrate is mounted. In addition, the through hole is formed in the center of the figure formed by the support points to improve the process uniformity by smoothly flowing the process gases up and down the substrate holder.
[18] The substrate support may be formed of one of a triangle and a honey comb, and the substrate support may be formed to protrude to support the semiconductor substrate. The through hole is formed in the center of the figure, so that even if the semiconductor substrate is placed on the substrate holder, the process uniformity can be smoothly flowed from the bottom to improve the process uniformity.
[19] As described above, the substrate holder for supporting a semiconductor substrate of the present invention can minimize the area in contact with the lower surface of the semiconductor substrate, thereby preventing the risk of the semiconductor substrate sticking to the substrate holder, and a plurality of through holes are formed in the substrate holder. In this way, the process gas flow can be more uniformly controlled, thereby increasing process uniformity.
[20] Hereinafter, with reference to the accompanying drawings will be described an embodiment of the present invention; However, embodiments of the present invention illustrated below may be modified in various other forms, and the scope of the present invention is not limited to the embodiments described below. The embodiments of the present invention are provided to more completely explain the present invention to those skilled in the art.
[21] 1A is a plan view showing a first embodiment of a substrate holder for supporting a semiconductor substrate according to the present invention, and FIG. 1B is a sectional view of 1A.
[22] Referring to this, the substrate holder for supporting a semiconductor substrate of the present invention is a substrate protrudingly formed on a holder body 10 formed in a circular plate shape and a plate surface of the holder body 10 to partially support the semiconductor substrate 100. And a support 20.
[23] At this time, the holder main body 10 is made of quartz or silicon carbide, and can be applied at high temperatures.
[24] The substrate support 20 is formed on the plate surface while forming concentric circles from the center of the holder body 10 to the outer shell in the form of a plurality of rings. And the cross section of the board | substrate support part 20 which protruded is formed in the taper form which becomes narrower toward the edge part. Thus, the contact area can be minimized while supporting the semiconductor substrate 100 from the bottom.
[25] 2A to 3A are plan views showing a second embodiment of a substrate holder for supporting a semiconductor substrate of the present invention, and FIGS. 2B to 3B are cross-sectional views taken along the line II-II of FIG. 2A and III- of FIG. 3A, respectively. Sectional view taken along line III.
[26] Referring to these, there is a holder body 10 on a circular plate, and the support points formed in the form of a plurality of dots on the plate surface of the holder body 10 serve as the substrate support 20. Reference is then made to reference point 20. These support points 20 are distributed with certain rules in order to support the semiconductor substrate 100 in a balanced manner on the plate surface of the holder body 10.
[27] 2A to 2B, as shown, support points 20 formed on the plate surface are disposed at vertices of an equilateral triangle. These support points 20 can be supported at a predetermined height away from the plate surface so as not to contact the holder body 10. Thus, the contact area with the lower portion of the semiconductor substrate 100 is maintained in the form of dots to minimize the contact area.
[28] Referring to Figures 3a to 3b, it is arranged at each vertex of the regular hexagon. That is, a regular hexagon of a predetermined size is arranged on the plate surface of the holder main body 10 in a circular plate shape to form a kind of honey comb, and support points 20 having a predetermined size are formed at positions of each vertex. . At this time, the support points 20 is formed in a circular cross-section is a circular cross-section has a narrow projection point shape from the bottom to the top. Thus, when the semiconductor substrate 100 is mounted on the substrate holder 10, the area where the lower surface of the semiconductor substrate 100 and the support point 20 contact each other may be minimized.
[29] 4A to 4B are plan and cross-sectional views modified from the embodiments of the present invention described above.
[30] Referring to this, not only the point-shaped substrate support part 20 is included on the substrate holder 10, but also a plurality of through holes 10a formed through the plate surface of the holder body 10. The through hole 10a smoothly passes the flow of the process gas flowing up and down on the back surface of the semiconductor substrate 100. Thus, the uniform reaction of the process gas can be induced, the heat transfer can be smoothed, and the uniformity of the film formed on the semiconductor substrate 100 can be improved. Even in the case of simply a heat treatment process, a heat treatment process may be performed in which an atmosphere gas, which is a heat transfer medium, flows smoothly to maintain a uniform temperature on a semiconductor substrate.
[31] At this time, the substrate support part 20 is regularly arranged, forming predetermined figures, such as a triangle, a hexagon, a square, a rhombus, etc. In addition, the through-hole 10a is further formed in the center of these figures. As an example, as shown in FIG. 4A, the substrate support 20 is disposed at a vertex of a regular hexagon to form a hexagon. The through hole 10a is formed in the center of the hexagon through the plate surface of the holder body 10.
[32] Here, the arrangement of the substrate support 20 is hexagonal rather than forming an equilateral triangle, it is possible to reduce the number of the substrate support 20 rather than the equilateral triangle arrangement. In addition, a wider passage may be secured to the lower surface of the semiconductor substrate 100 to smoothly flow the process gas.
[33] 5A to 6A are plan views showing a fourth embodiment of a substrate holder for supporting a semiconductor substrate of the present invention, and FIGS. 5B to 6B are cross-sectional views taken along the line VV of FIG. 5A and line VI-VI of FIG. 6A, respectively. .
[34] 5A to 5B, a predetermined figure is formed on the plate surface of the holder main body 10 on the circular plate, but the inside of the figure is recessed to a predetermined depth. In other words, each side of the triangular or hexagonal figure protrudes to form the substrate support 20, and the inside of the figure is recessed to a predetermined depth.
[35] 6A to 6B, each side of the holder main body 10 on the circular plate forms a predetermined shape as shown in FIG. 5A to form a substrate support 20. And through-hole 10a is formed in the center of each figure. Then, the process gas and the like are smoothly ventilated through the through hole 10a to induce a uniform flow of the gas. Accordingly, the temperature of the semiconductor substrate 100 mounted on the substrate holder 10 can be maintained uniformly, and process uniformity can also be improved.
[36] As described above, the substrate holder for supporting a semiconductor substrate of the present invention includes a plurality of support points protruding while forming a predetermined shape on the upper surface of the holder body 10 so that the process can be carried out while supporting the semiconductor substrate 100 with a minimized area. The substrate support 20 formed linearly was prepared. Therefore, the contact area with the semiconductor substrate 100 can be minimized during the high temperature process or the general deposition process (CVD) to effectively prevent the semiconductor substrate 100 from adhering to the surface of the substrate holder 10. have.
[37] On the other hand, the substrate holder for supporting the semiconductor substrate of the present invention, when loading or unloading the semiconductor substrate 100 in addition to the through hole (10a) on the surface of the holder body 10 in the case of the above-described embodiments, A support pin hole (10b of FIG. 1) may be further provided to allow a support pin (not shown) to lift the semiconductor substrate 100 through a separate substrate mover (not shown).
[38] The substrate holder for supporting a semiconductor substrate of the present invention having the above configuration can be applied to any technical field, whether single chamber type or batch type, for a substrate support plate on which a semiconductor substrate is placed.
[39] As described above, the substrate holder for supporting a semiconductor substrate of the present invention can prevent a defect in which the semiconductor substrate is damaged when the substrate is handled because the semiconductor substrate does not adhere to the substrate holder plate even in a high temperature process or a general deposition process.
[40] The through hole is formed on the plate surface of the substrate holder for supporting the semiconductor substrate of the present invention, thereby smoothly controlling the flow of the process gas, thereby improving process uniformity.

权利要求:
Claims (10)
[1" claim-type="Currently amended] A holder body formed on a circular plate so that the semiconductor substrate can be placed thereon;
A substrate holder for supporting a semiconductor substrate, comprising: a substrate support portion protruding to form a predetermined figure on the upper surface of the holder body to support the semiconductor substrate.
[2" claim-type="Currently amended] The substrate holder of claim 1, wherein the holder body is formed of one of quartz and silicon carbide.
[3" claim-type="Currently amended] The substrate holder for supporting a semiconductor substrate according to claim 1, wherein the substrate support portion is formed in a plurality of concentric circles on a plate surface of the holder body.
[4" claim-type="Currently amended] The substrate holder for supporting a semiconductor substrate according to claim 3, wherein a plurality of through holes are formed in the holder body.
[5" claim-type="Currently amended] The substrate holder of claim 1, wherein the substrate support is a plurality of dots protruding from the plate surface while forming a predetermined figure on the plate surface of the holder body.
[6" claim-type="Currently amended] The substrate holder for supporting a semiconductor substrate according to claim 5, wherein the substrate support is a tapered spinner having a wide lower portion and a narrow upper portion.
[7" claim-type="Currently amended] 5. The substrate holder of claim 4, wherein the support points are disposed at each vertex according to any one of a triangle and a honey comb.
[8" claim-type="Currently amended] 8. The substrate holder of claim 7, wherein a through hole is formed in the center of the figure formed by the support points.
[9" claim-type="Currently amended] The substrate for supporting a semiconductor substrate according to claim 1, wherein the substrate support is formed of one of a triangle and a honey comb, and the boundary portion of the figure protrudes to support the semiconductor substrate. holder.
[10" claim-type="Currently amended] The substrate holder for supporting a semiconductor substrate according to claim 8, wherein a through hole is formed in the center of the figure.

类似技术:

---

公开号 | 公开日 | 专利标题

---

KR100812469B1|2008-03-10|Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition

---

US5044943A|1991-09-03|Spoked susceptor support for enhanced thermal uniformity of susceptor in semiconductor wafer processing apparatus

---

US8088225B2|2012-01-03|Substrate support system for reduced autodoping and backside deposition

---

US6099302A|2000-08-08|Semiconductor wafer boat with reduced wafer contact area

---

KR100444756B1|2004-11-11|Low mass susceptor

---

US6893507B2|2005-05-17|Self-centering wafer support system

---

JP3245246B2|2002-01-07|Heat treatment equipment

---

EP0448346B1|1997-07-09|Vapor-phase deposition apparatus

---

US6805749B2|2004-10-19|Method and apparatus for supporting a semiconductor wafer during processing

---

KR101294129B1|2013-08-07|Wafer carrier with varying thermal resistance

---

KR102147326B1|2020-08-24|Substrate supporting apparatus

---

US6729875B2|2004-05-04|Susceptor pocket profile to improve process performance

---

JP4655935B2|2011-03-23|Manufacturing method of silicon epitaxial wafer

---

EP1654752B1|2011-06-29|Holder for supporting wafers during semiconductor manufacture

---

US6776849B2|2004-08-17|Wafer holder with peripheral lift ring

---

JP2013093582A|2013-05-16|Susceptor for improving throughput and reducing wafer damage

---

CA2318968C|2004-07-20|Slip free vertical rack design having rounded horizontal arms

---

US7077912B2|2006-07-18|Semiconductor manufacturing system

---

US6375749B1|2002-04-23|Susceptorless semiconductor wafer support and reactor system for epitaxial layer growth

---

KR20020026480A|2002-04-10|Wafer supporting device of semiconductor manufacturing device

---

JP4061904B2|2008-03-19|Wafer holder

---

US5848889A|1998-12-15|Semiconductor wafer support with graded thermal mass

---

US6569239B2|2003-05-27|Silicon epitaxial wafer and production method therefor

---

KR20030086220A|2003-11-07|Modified susceptor for use in chemical vapor deposition process

---

EP2103720B1|2012-03-21|Susceptor for vapor phase epitaxial growth device

同族专利:

---

公开号 | 公开日

---

KR100533586B1|2005-12-06|

引用文献:

---

公开号 | 申请日 | 公开日 | 申请人 | 专利标题

---

法律状态:
2002-10-14|Application filed by 주식회사 테라세미콘

---

2002-10-14|Priority to KR10-2002-0062476A

---

2004-04-28|Publication of KR20040033403A

---

2005-12-06|Application granted

---

2005-12-06|Publication of KR100533586B1

优先权:

---

申请号 | 申请日 | 专利标题

---

KR10-2002-0062476A|KR100533586B1|2002-10-14|2002-10-14|Wafer holder for supporting semiconductor wafer|